Fast growth of n-type 4H-SiC bulk crystal by gas-source method
作者: Norihiro HoshinoIsaho KamataYuichiro TokudaEmi MakinoTakahiro KandaNaohiro SugiyamaHironari KunoJun KojimaHidekazu Tsuchida
作者单位: 1Central Research Institute of Electric Power Industry (CRIEPI), 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan
2DENSO CORPORATION, 500-1 Minamiyama, Komenoki, Nisshin, Aichi, Japan
3National Institute of Advanced Industrial Science and Technology (AIST), 16-1 Onogawa, Tsukuba, Ibaraki, Japan
刊名: Journal of Crystal Growth, 2017, Vol.478 , pp.9-16
来源数据库: Elsevier Journal
DOI: 10.1016/j.jcrysgro.2017.08.004
关键词: A1. DopingA2. Growth from vaporA2. Industrial crystallizationA2. Single crystal growthB2. Semiconducting silicon compounds
英文摘要: Abstract(#br)Fast growth of n-type 4H-SiC crystals was attempted using a high-temperature gas-source method. High growth rates exceeding 9mm/h were archived at a seed temperature of 2550°C, although the formation of macro-step bunching caused doping fluctuation and voids in the grown crystal. We investigated a trade-off between growth-rate enhancement and macro-step formation and how to improve the trade-off. By controlling the growth conditions, the growth of highly nitrogen-doped 4H-SiC crystals without the doping fluctuation and void formation were accomplished under a high growth rate exceeding 3mm/h, maintaining the density of threading screw dislocations in the same level with the seed crystal. The influence of growth...
全文获取路径: Elsevier  (合作)
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影响因子:1.552 (2012)

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关键词翻译
关键词翻译
  • crystal 晶体
  • growth 生长
  • silicon 
  • source 
  • method 方法
  • vapor 
  • Growth 生长
  • compounds 化合物