Very high resolution etching of magnetic nanostructures in organic gases
作者: X. KongD. KrásaH.P. ZhouW. WilliamsS. McVitieJ.M.R. WeaverC.D.W. Wilkinson
作者单位: 1Department of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ, UK
2School of GeoSciences, Kings Buildings, University of Edinburgh, Edinburgh EH9 3JW, UK
3Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8RT, UK
刊名: Microelectronic Engineering, 2008, Vol.85 (5-6), pp.988-991
来源数据库: Elsevier Journal
DOI: 10.1016/j.mee.2007.12.006
关键词: Dry etchingNiFeFeCH 4 /H 2 /O 2CO/NH 3
原始语种摘要: Abstract(#br)Two methods for high resolution dry etching of permalloy (NiFe) and iron (Fe) nanostructures are presented and discussed. The first involves the use of carbon monoxide (CO) and ammonia (NH 3 ) as etching gases, the second uses methane (CH 4 ), hydrogen (H 2 ) and oxygen (O 2 ). In both etching processes volatile metallo-organic compounds are the resulting reaction products. The patterned and dry etched thin films were observed with SEM and TEM to study the quality of each of the two processes. It is found that the CO/NH 3 process yields higher etch rates, higher selectively with respect to the SiN mask used, and less redeposition than the CH 4 /H 2 /O 2 process.
全文获取路径: Elsevier  (合作)
影响因子:1.224 (2012)

  • etching 蚀刻法
  • organic 有机的
  • magnetic 磁的
  • gases 气体
  • resolution 分解能力