Photoplastic Effect in Narrow-Gap Mercury Chalcogenide Crystals
作者: B. P. Koman, O. O. Balitskii, D. S. Leonov
作者单位: 1Ivan Franko National University of Lviv, 1 Universytetska Str., UA-79000 Lviv, Ukraine
2Technical Centre, NAS of Ukraine, 13 Pokrovs’ka Str., 04070 Kyiv, Ukraine
刊名: Metallofiz. Noveishie Tekhnol., 2018, Vol.40 (04), pp.529-540
来源数据库: G.V. Kurdyumov Institute for Metal Physics, National Academy of Science of the Ukraine
DOI: 10.15407/mfint.40.04.0529
关键词: Photoplasticization effectNarrow-gap semiconductorMercury chalcogenidesDislocationsDeformation.
原始语种摘要: The paper elucidates the peculiarities of photoplasticization effect (PPE) occurring in narrow-gap crystals of mercury chalcogenides illuminated by white light during the process of uniaxial deformation. As found, the irradiation has an influence on the plastic deformation in narrow-gap Cd$_{x}$Hg$_{1-x}$Te crystals. Negative photoplasticization effect (NPPE) described here is concerned with reducing of plastic stress fluidity under white-light irradiation during plastic deformation of crystals at a constant rate. As found, in contrary to wide-bandgap crystals of the II–VI groups exhibiting positive PPE, NPPE observed in Cd$_{x}$Hg$_{1-x}$Te occurs without internal photoeffect. A model explaining the nature of NPPE relies on a decreasing of positive charge in a native oxide layer at the...
全文获取路径: PDF下载  N.A.S. of Ukraine  (合作)

  • photoeffect 光电效应
  • semiconductor 半导体
  • Mercury 水星水银
  • light 
  • decreasing 递减
  • plastic 可塑性的
  • narrow 狭窄的
  • uniaxial 单轴的
  • surface 
  • influence 影响