Electrical Behavior of Cd0.3Zn1.1x S0.7 Thin Films for Non-Heat Light Emitting Diodes
作者: Mosiori Cliff Orori Maera John Shikambe Reuben Magare Robert
刊名: Path of Science, 2017, Vol.3 (6)
来源数据库: Path of Science
DOI: 10.22178/pos.23-5
关键词: complexing agentzinccadmiumthiourearesistivitysulphur
原始语种摘要: In developing countries like Kenya, solution processing technique is the cheapest and simplest technique to grow inorganic composites thin films. This method was used to grow thin films of Cd0.3Zn1.1xS0.7 on ordinary microscope Perspex substrate slides from aqueous solutions of Zinc chloride and cadmium chloride in ammonia solution. A solution of triethanalomine was used as a complexing agent while thiourea was used as source of sulphide ions. Electrical properties as a function of their thicknesses were obtained by varying deposition time while all other parameters were maintained constant. Using a resistance measurement device and a Gauss meter, resistivity and the conductivity of the films were found to be thickness dependent with semiconductor nature.
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  • semiconductor 半导体
  • films 薄膜
  • parameters 参数
  • device 装置
  • substrate 基质
  • resistivity 电阻率
  • deposition 沉积
  • properties 道具
  • technique 技术
  • Perspex 珀斯佩克斯有机玻璃