Fabrication and Electrical Properties of Silver Telluride Nanowires.
作者: Gao YuanWang KaSong HaizengWu HanYan ShanchengXu XinShi Yi
作者单位: 1School of Geography and Biological Information, Nanjing University of Posts and Telecommunications, Nanjing 210023, P. R. China.
2School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China.
刊名: Journal of nanoscience and nanotechnology, 2020, Vol.20 (4), pp.2628-2632
来源数据库: PubMed Journal
DOI: 10.1166/jnn.2020.17330
原始语种摘要: As a new topological insulator material, the β -phase silver telluride (Ag₂Te) nanowire is a narrow bandgap semiconductor, which is attractive for its excellent properties. In this study, Ag₂Te nanowires were synthesized by one-step hydrothermalmethod. The nanowires showed good electrical properties with maximum drain-source voltage of 1.5 V, and the output current was up to 20 μ A. The gate voltage has a significant effect on output current for the device. The Ag₂Te nanowires will have more extensive and in-depth applications in the fields of optoelectronics and thermoelectricity.
全文获取路径: PubMed  (合作)

  • semiconductor 半导体
  • current 
  • properties 道具
  • device 装置
  • electrical 电的
  • telluride 碲化物
  • insulator 绝缘体
  • topological 拓扑的
  • Silver 
  • output 输出