Growth and characterization of CuO nanostructures on Si for the fabrication of CuO/p-Si Schottky diodes.
作者: Cetinkaya SCetinkara H ABayansal FKahraman S
作者单位: 1Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay, Turkey.
刊名: TheScientificWorldJournal, 2013, Vol.2013 , pp.126982
来源数据库: PubMed Journal
DOI: 10.1155/2013/126982
原始语种摘要: CuO interlayers in the CuO/p-Si Schottky diodes were fabricated by using CBD and sol-gel methods. Deposited CuO layers were characterized by SEM and XRD techniques. From the SEM images, it was seen that the film grown by CBD method is denser than the film grown by sol-gel method. This result is compatible with XRD results which show that the crystallization in CBD method is higher than it is in sol-gel method. For the electrical investigations, current-voltage characteristics of the diodes have been studied at room temperature. Conventional I-V and Norde's methods were used in order to determine the ideality factor, barrier height, and series resistance values. It was seen that the morphological and structural analysis are compatible with the results of electrical investigations.
全文获取路径: PubMed  (合作)
影响因子:1.73 (2012)

  • Schottky 肖特基法
  • fabrication 制造
  • grown 生长
  • fabricated 制造
  • electrical 电的
  • Growth 生长
  • ideality 理想
  • result 成果
  • Testing 检测
  • current