Gamma-Ray Irradiation Response of the Motor-Driver Circuit with SiC MOSFETs
作者: Yugo KobayashiTakashi YokozekiTakuma MatsudaSatoshi MitomoKoichi MurataMichihiro HachisukaYasuyoshi KanekoTakahiro MakinoAkinori TakeyamaShinobu OnodaTakeshi OhshimaYuki TanakaMikio KandoriToru YoshieYasuto Hijikata
作者单位: 1Saitama University
2Japan Atomic Energy Research Agency
3Sanken Electric
刊名: Materials Science Forum, 2016, Vol.3999 , pp.868-871
来源数据库: Trans Tech Journal
DOI: 10.4028/www.scientific.net/MSF.858.868
关键词: Gamma-Ray IrradiationSiC MOSFETMotor-Driver Circuit
原始语种摘要: Gamma-ray irradiation effects of motor-driver circuit composed of SiC MOSFETs under motor driving with different PWM frequencies were investigated. The driving current and voltage waveforms were normal when the irradiation exceeded 1.1 MGy at PWM frequency of 10 kHz. In addition, the motor was still rotating in this total dose. We compared the irradiation responses of SiC MOSFETs between the cases of driving states and no bias. The drain current – gate voltage characteristics with no bias shifted to the negative voltage side wider than the driving states. Also the leakage current in the case of driving state is fewer than that of no bias.
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关键词翻译
关键词翻译
  • driving 传动的
  • total 总和
  • still 
  • irradiation 照射
  • current 
  • between 在中间
  • MOSFET 金(属)氧(化物)半导体场效应晶体管
  • driver 驱动器传动装置
  • voltage 电压
  • composed 沉着的