The influence of annealing on the electrical and optical properties of silicon-rich silicon nitride films
作者: Karolina CzarnackaF. F. Komarov
作者单位: Lublin Univ. of Technology (Poland);;A.N. Sevchenko Institute of Applied Physics Problems (Belarus);;Warsaw Univ. of Technology (Poland)
论文集英文名称: Symposium on Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments (WILGA)
来源数据库: SPIE-the International Society for Optical Engineering
DOI: 10.1117/12.2249111
原始语种摘要: In this paper measurements results of electrical and optical properties of SiNx thin layers are presented. Layers were produced by chemical vapor deposition on n-type (100)-oriented silicon substrates. Measurements were performed for samples directly after deposition and for samples annealed in temperature of 1073 K. Resistance Rp, capacity Cp, phase angle shift θ and dielectric loss factor tgδ were the measuring parameters on AC in the frequency range from 50 Hz to 5 MHz as a function of measurement temperature from the range 20 K – 373 K. Based on this, the conductivity σ and the activation energy of conductivity were determined. Photoluminescence spectra were recorded at room temperature in the spectral region of 350 – 800 nm using a...
全文获取路径: SPIE  (合作)

  • silicon 
  • electrical 电的
  • properties 道具
  • influence 影响
  • optical 光学的
  • annealing 热处理
  • nitride 氮化物
  • spectra 光谱
  • films 薄膜
  • deposition 沉积