F. F. Komarov
||Lublin Univ. of Technology (Poland);;A.N. Sevchenko Institute of Applied Physics Problems (Belarus);;Warsaw Univ. of Technology (Poland)
||Symposium on Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments (WILGA)
||SPIE-the International Society for Optical Engineering
In this paper measurements results of electrical and optical properties of SiNx thin layers are presented. Layers were produced by chemical vapor deposition on n-type (100)-oriented silicon substrates. Measurements were performed for samples directly after deposition and for samples annealed in temperature of 1073 K. Resistance Rp, capacity Cp, phase angle shift θ and dielectric loss factor tgδ were the measuring parameters on AC in the frequency range from 50 Hz to 5 MHz as a function of measurement temperature from the range 20 K – 373 K. Based on this, the conductivity σ and the activation energy of conductivity were determined. Photoluminescence spectra were recorded at room temperature in the spectral region of 350 – 800 nm using a... He-Cd laser source with λ=325 nm. The influence of annealing on the electrical and optical properties was explained. Current resonance phenomenon and reduction of photoluminescence spectra were observed.