Influence of high temperature annealing on AC electric properties of SiO<sub>2</sub> thin layers implanted with In and Sb ions
作者: Karolina CzarnackaTomasz N. KoltunowiczAleksander K. Fedotov
作者单位: Lublin Univ. of Technology (Poland);;Belarusian State Univ. (Belarus);;Warsaw Univ. of Technology (Poland)
论文集英文名称: Symposium on Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments (WILGA)
来源数据库: 外文会议
DOI: 10.1117/12.2536668
原始语种摘要: This paper presents results of AC measurements of resistance Rp, phase angle Θ, capacity Cp and loss tangent tgΔ in dependences on frequency and temperature for InSb-SiO2/Si nanocomposite, immediately after preparation and annealed at 1273 K. The material was obtained by the In+ and Sb+ ions implantation into a SiO2 thin layer. Using obtained parameters frequency dependence of conductivity σ, real and imaginary components of permittivity were determined. This work refers to the hopping mechanism of conductivity and relaxation mechanisms of prepared material.

  • sub 分段
  • properties 道具
  • temperature 温度
  • annealing 热处理
  • layers 
  • dependence 从属
  • annealed 已退火的
  • parameters 参数
  • conductivity 传导率
  • hopping 加酒花