Tomasz N. Koltunowicz
Aleksander K. Fedotov
||Lublin Univ. of Technology (Poland);;Belarusian State Univ. (Belarus);;Warsaw Univ. of Technology (Poland)
||Symposium on Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments (WILGA)
This paper presents results of AC measurements of resistance Rp, phase angle Θ, capacity Cp and loss tangent tgΔ in dependences on frequency and temperature for InSb-SiO2/Si nanocomposite, immediately after preparation and annealed at 1273 K. The material was obtained by the In+ and Sb+ ions implantation into a SiO2 thin layer. Using obtained parameters frequency dependence of conductivity σ, real and imaginary components of permittivity were determined. This work refers to the hopping mechanism of conductivity and relaxation mechanisms of prepared material.