AC dielectric properties of SiO<sub>2</sub> thin layers implanted with In and Sb ions
作者: Karolina CzarnackaTomasz N. KoltunowiczAleksander K. Fedotov
作者单位: Univ. of Life Sciences in Lublin (Poland);;Lublin Univ. of Technology (Poland);;Belarusian State Univ. (Belarus);;Warsaw Univ. of Technology (Poland)
论文集英文名称: Symposium on Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments (WILGA)
来源数据库: 外文会议
DOI: 10.1117/12.2501667
原始语种摘要: In this paper results of AC measurements of phase angle Θ, capacity Cp and loss tangent tgΔ dependences on frequency and temperature for InSb-SiO2 nanocomposite, immediately after preparation are presented. The material was obtained by the implantation of In+ and Sb+ ions into a thin layer of SiO2. Based on mathematical and physical calculations, frequency dependence of conductivity σ and relative permittivity εr were determined. Activation energy of electrons was also calculated. This work refers to the hopping mechanism of conductivity.

  • dielectric 电介质
  • sub 分段
  • properties 道具
  • layers 
  • dependence 从属
  • conductivity 传导率
  • hopping 加酒花
  • calculated 计算的
  • tangent 切线
  • temperature 温度