Tomasz N. Koltunowicz
Aleksander K. Fedotov
||Univ. of Life Sciences in Lublin (Poland);;Lublin Univ. of Technology (Poland);;Belarusian State Univ. (Belarus);;Warsaw Univ. of Technology (Poland)
||Symposium on Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments (WILGA)
In this paper results of AC measurements of phase angle Θ, capacity Cp and loss tangent tgΔ dependences on frequency and temperature for InSb-SiO2 nanocomposite, immediately after preparation are presented. The material was obtained by the implantation of In+ and Sb+ ions into a thin layer of SiO2. Based on mathematical and physical calculations, frequency dependence of conductivity σ and relative permittivity εr were determined. Activation energy of electrons was also calculated. This work refers to the hopping mechanism of conductivity.