Pressureless Silver Sintering of Silicon-Carbide Power Modules for Electric Vehicles
作者: Won Sik HongMi Song KimOh ChulminYongjin JooYoungseok KimKyoung-Kuk Hong
刊名: JOM, 2020, Vol.72 (2), pp.889-897
来源数据库: ProQuest Journal
原始语种摘要: Pressureless silver (Ag) sintering was optimized at 250°C in vacuum and nitrogen gas atmosphere with silicon carbide (SiC) chips, and silicon nitride active metal-brazed substrates (AMB). A 1200-V/200-A power module was developed using a pressureless Ag-sintered live SiC metal-oxide-semicon-ductor field-effect transistor (MOSFET) device and a Si3N4 AMB substrate module, and diverse reliability tests were performed. The void content and the bonding layer thickness of the Ag sinter joints were 1.2-3.4% and 68.5 µm. The bonding strength of the Ag sinter joints after thermal cycling testing (TCT) were slightly decreased due to the crack generation. In contrast, high-temperature storage testing (HTST) was carried out for a long time at high temperature, the sintering...
全文获取路径: ProQuest  (合作)
影响因子:0.986 (2012)

  • silicon 
  • semicon 半导体
  • MOSFET 金(属)氧(化物)半导体场效应晶体管
  • ductor 铁芯感应炉
  • sintered 烧结的
  • device 装置
  • substrate 基质
  • thermal 热的
  • module 模数
  • joints 纲线的交织