Fabrication of lithium-drifted silicon detectors by constant temperature method
作者: R P SharmaA S Divatia
作者单位: 1Variable Energy Cyclotron Centre
刊名: Pramana, 1986, Vol.26 (3), pp.191-203
来源数据库: Springer Journal
DOI: 10.1007/BF02845260
关键词: Lithium-drifted silicon detectorsconstant temperature drift methodcharacterization
英文摘要: Abstract(#br)A new approach for lithium drifting in silicon is described where the silicon devices under drift are held at constant temperature and bias at normal air ambient, and the drift process is terminated at the end of an estimated time depending upon the thickness of wafers. A 4-channel lithium drifting unit with electronically controlled oven has been constructed for this purpose. Full details of the fabrication procedure are given. A sizable number of Si(Li) detectors have been fabricated using this approach. The quality of the detectors is tested with 241 Am alphas and conversion electrons from 209 Bi and 137 Cs sources. The detectors are regularly used for nuclear physics experiments at this Centre.
全文获取路径: Springer  (合作)
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影响因子:0.562 (2012)

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关键词翻译
关键词翻译
  • lithium 
  • silicon 
  • temperature 温度
  • constant 常数
  • method 方法