Simulation and characterization of a dual-type 3-dimensional silicon detector
作者: Jihoon ChoiKyungmin LeeEunil Won
作者单位: 1Department of Physics, Korea University
刊名: Journal of the Korean Physical Society, 2012, Vol.60 (11), pp.1862-1867
来源数据库: Springer Nature Journal
DOI: 10.3938/jkps.60.1862
关键词: 3D detectorSilicon detectorRadiation hardness
英文摘要: Abstract(#br)A three-dimensional (3D) silicon detector is an alternative semiconductor detector for high radiation environments. The 3D detector has several advantages such as radiation hardness so it can be used for a longer period of time in a high radiation environment without replacement. A dual-type 3D silicon detector is simulated, and the full depletion voltage, capacitance, response time and charge collection efficiency are measured.
全文获取路径: Springer Nature  (合作)
影响因子:0.506 (2012)

  • silicon 
  • detector 探测器检波器
  • dimensional 量纲的