Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfO x /ZnO x /TiN Memristive System
作者: Lai-Guo WangWei ZhangYan ChenYan-Qiang CaoAi-Dong LiDi Wu
作者单位: 1National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University
2Anhui Key Laboratory of Functional Coordination Compounds, School of Chemistry and Chemical Engineering, Anqing Normal University
刊名: Nanoscale Research Letters, 2017, Vol.12 (1), pp.1-8
来源数据库: Springer Nature Journal
DOI: 10.1186/s11671-017-1847-9
关键词: Atomic layer depositionMemristorPt/HfO x /ZnO x /TiNSynapse plasticity
英文摘要: Abstract(#br)In this work, a kind of new memristor with the simple structure of Pt/HfO x /ZnO x /TiN was fabricated completely via combination of thermal-atomic layer deposition (TALD) and plasma-enhanced ALD (PEALD). The synaptic plasticity and learning behaviors of Pt/HfO x /ZnO x /TiN memristive system have been investigated deeply. Multilevel resistance states are obtained by varying the programming voltage amplitudes during the pulse cycling. The device conductance can be continuously increased or decreased from cycle to cycle with better endurance characteristics up to about 3 × 10 3 cycles. Several essential synaptic functions are simultaneously achieved in such a single double-layer of HfO x /ZnO x device, including nonlinear transmission properties, such as long-term plasticity...
全文获取路径: Springer Nature  (合作)
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影响因子:2.524 (2012)

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