Effects of laser parameters on optoelectronic properties of polycrystalline silicon films prepared by two-step annealing process
作者: H. K. LinU. G. HuangS. Z. Hong
作者单位: 1National Pingtung University of Science and Technology
刊名: The International Journal of Advanced Manufacturing Technology, 2017, Vol.93 (9-12), pp.3159-3163
来源数据库: Springer Nature Journal
DOI: 10.1007/s00170-017-0767-2
关键词: Silicon filmLaserAnnealingCrystallization
原始语种摘要: A two-step method combining furnace and laser annealing is proposed for improving the electrical and optical properties of amorphous silicon thin films on glass substrates. It is shown that the optical transmittance of the as-deposited silicon film increases from 27 to 31% following furnace annealing at 600 °C. However, the electrical resistance is too high to be measured using a four-point probe. The sheet resistance can be reduced to 270 kΩ/□ by annealing the as-deposited film using an ultra-violet (UV) laser. However, the resistance is still too high for TFT applications. The as-deposited silicon film is first furnace annealed at 600 °C for 12 h and then annealed using a UV laser with a laser power of 41 mW and a scanning speed of 60 mm/s. The optical transmittance and sheet resistance...
全文获取路径: Springer Nature  (合作)

  • silicon 
  • properties 道具
  • laser 激光
  • annealing 热处理
  • parameters 参数
  • optoelectronic 光电子的
  • films 薄膜
  • annealed 已退火的
  • electrical 电的
  • transmittance 透射比