Review of physics-based compact models for emerging nonvolatile memories
作者: Nuo XuPai-Yu ChenJing WangWoosung ChoiKeun-Ho LeeEun Seung JungShimeng Yu
作者单位: 1Samsung Semiconductor Inc.
2Arizona State University
3Samsung Electronics
刊名: Journal of Computational Electronics, 2017, Vol.16 (4), pp.1257-1269
来源数据库: Springer Journal
DOI: 10.1007/s10825-017-1098-0
关键词: Compact modelingNonvolatile memory (NVM )Reaction rate equation (RRE )GSTPCMOTSSTT-MRAMRRAMCross-point1T1R
英文摘要: A generic compact modeling methodology for emerging nonvolatile memories is proposed by coupling comprehensive physical equations from multiple domains (e.g., electrical, thermal, magnetic, phase transitions). This concept has been applied to three most promising emerging memory candidates: PCM, STT-MRAM, and RRAM to study their device physics as well as to evaluate their circuit-level performance. The models’ good predictability to experiments and their effectiveness in large-scale circuit simulation suggest their unique role in emerging memory research and development.
原始语种摘要: A generic compact modeling methodology for emerging nonvolatile memories is proposed by coupling comprehensive physical equations from multiple domains (e.g., electrical, thermal, magnetic, phase transitions). This concept has been applied to three most promising emerging memory candidates: PCM, STT-MRAM, and RRAM to study their device physics as well as to evaluate their circuit-level performance. The models’ good predictability to experiments and their effectiveness in large-scale circuit simulation suggest their unique role in emerging memory research and development.
全文获取路径: Springer  (合作)
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来源刊物:
影响因子:1.013 (2012)

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关键词翻译
关键词翻译
  • nonvolatile 非挥发性的
  • emerging 浮起
  • physics 物理学
  • modeling 制祝型
  • compact 紧的
  • device 装置
  • thermal 热的
  • electrical 电的
  • based 基于
  • their 他们的