Parasitic Parameters Extraction for InP DHBT Based on EM Method and Validation up to H-Band
作者: Oupeng LiYong ZhangLei WangRuimin XuWei ChengYuan WangHaiyan Lu
作者单位: 1University of Electronic Science and Technology of China
2Nanjing Electronic Devices Institute
刊名: Journal of Infrared, Millimeter, and Terahertz Waves, 2017, Vol.38 (5), pp.583-595
来源数据库: Springer Journal
DOI: 10.1007/s10762-017-0360-7
关键词: InP DHBTSmall-signal modelElectromagnetic (EM) simulationAmplifier
英文摘要: This paper presents a small-signal model for InGaAs/InP double heterojunction bipolar transistor (DHBT). Parasitic parameters of access via and electrode finger are extracted by 3-D electromagnetic (EM) simulation. By analyzing the equivalent circuit of seven special structures and using the EM simulation results, the parasitic parameters are extracted systematically. Compared with multi-port s-parameter EM model, the equivalent circuit model has clear physical intension and avoids the complex internal ports setting. The model is validated on a 0.5 × 7 μm2 InP DHBT up to 325 GHz. The model provides a good fitting result between measured and simulated multi-bias s-parameters in full band. At last, an H-band amplifier is designed and fabricated for further verification. The...
原始语种摘要: This paper presents a small-signal model for InGaAs/InP double heterojunction bipolar transistor (DHBT). Parasitic parameters of access via and electrode finger are extracted by 3-D electromagnetic (EM) simulation. By analyzing the equivalent circuit of seven special structures and using the EM simulation results, the parasitic parameters are extracted systematically. Compared with multi-port s-parameter EM model, the equivalent circuit model has clear physical intension and avoids the complex internal ports setting. The model is validated on a 0.5 × 7 μm2 InP DHBT up to 325 GHz. The model provides a good fitting result between measured and simulated multi-bias s-parameters in full band. At last, an H-band amplifier is designed and fabricated for further verification. The...
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关键词翻译
关键词翻译
  • parameters 参数
  • heterojunction 异质结
  • fabricated 制造
  • amplifier 放大器
  • model 模型
  • result 成果
  • transistor 晶体管
  • simulation 模拟
  • systematically 系统地
  • bipolar 二极的