Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices
作者: Sergii GolovynskyiLuca SeravalliOleksandr DatsenkoOleksii KozakSerhiy V. KondratenkoGiovanna TrevisiPaola FrigeriEnos GombiaSergii R. LavorykIuliia GolovynskaTymish Y. OhulchanskyyJunle Qu
作者单位: 1Shenzhen University
2National Academy of Sciences
3CNR-IMEM
4Taras Shevchenko National University of Kyiv
刊名: Nanoscale Research Letters, 2017, Vol.12 (1)
来源数据库: Springer Journal
DOI: 10.1186/s11671-017-2331-2
关键词: NanostructureQuantum dotMetamorphicInAs/InGaAsPhotovoltagePhotoconductivityPhotoluminescenceDefects
英文摘要: The bipolar effect of GaAs substrate and nearby layers on photovoltage of vertical metamorphic InAs/InGaAs in comparison with pseudomorphic (conventional) InAs/GaAs quantum dot (QD) structures were studied. Both metamorphic and pseudomorphic structures were grown by molecular beam epitaxy, using bottom contacts at either the grown n +-buffers or the GaAs substrate. The features related to QDs, wetting layers, and buffers have been identified in the photoelectric spectra of both the buffer-contacted structures, whereas the spectra of substrate-contacted samples showed the additional onset attributed to EL2 defect centers. The substrate-contacted samples demonstrated bipolar photovoltage; this was suggested to take place as a result of the competition between components related...
原始语种摘要: The bipolar effect of GaAs substrate and nearby layers on photovoltage of vertical metamorphic InAs/InGaAs in comparison with pseudomorphic (conventional) InAs/GaAs quantum dot (QD) structures were studied. Both metamorphic and pseudomorphic structures were grown by molecular beam epitaxy, using bottom contacts at either the grown n +-buffers or the GaAs substrate. The features related to QDs, wetting layers, and buffers have been identified in the photoelectric spectra of both the buffer-contacted structures, whereas the spectra of substrate-contacted samples showed the additional onset attributed to EL2 defect centers. The substrate-contacted samples demonstrated bipolar photovoltage; this was suggested to take place as a result of the competition between components related...
全文获取路径: Springer  (合作)
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来源刊物:
影响因子:2.524 (2012)

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关键词翻译
关键词翻译
  • substrate 基质
  • grown 生长
  • GaAs 砷化镓
  • photovoltage 光电压
  • layers 
  • buffer 缓冲器
  • bipolar 二极的
  • metamorphic 变质的
  • result 成果
  • contacts 接点