Channel temperature measurement in hermetic packaged GaN HEMTs power switch using fast static and transient thermal methods
作者: Szu-Hao ChenPo-Chien ChouStone Cheng
作者单位: 1National Chiao-Tung University
刊名: Journal of Thermal Analysis and Calorimetry, 2017, Vol.129 (2), pp.1159-1168
来源数据库: Springer Journal
DOI: 10.1007/s10973-017-6275-7
关键词: Junction temperaturePower semiconductor deviceHeating curveCooling curveTransient thermal impedance (TTI)Safe operating area (SOA)
英文摘要: A GaN-based power device is a superior component for high-frequency and high-efficiency applications and especially for applications that involve megahertz power conversion. In this work, a fast process of static thermal resistance ( R th) and transient thermal impedance ( Z th) measurements are made and analyzed to determine the thermal characteristics of the channel temperature of a hermetically packaged GaN power device. Five temperature-sensitive parameters (TSPs) are measured at temperatures from 20 to 160 °C. Measurements and statistical analyses included variations with temperature of on-resistance ( R on), saturation drain current ( I Dsat), drain conductance ( g d), threshold voltage ( V th), and knee voltage ( V...
原始语种摘要: A GaN-based power device is a superior component for high-frequency and high-efficiency applications and especially for applications that involve megahertz power conversion. In this work, a fast process of static thermal resistance ( R th) and transient thermal impedance ( Z th) measurements are made and analyzed to determine the thermal characteristics of the channel temperature of a hermetically packaged GaN power device. Five temperature-sensitive parameters (TSPs) are measured at temperatures from 20 to 160 °C. Measurements and statistical analyses included variations with temperature of on-resistance ( R on), saturation drain current ( I Dsat), drain conductance ( g d), threshold voltage ( V th), and knee voltage ( V...
全文获取路径: Springer  (合作)
分享到:
来源刊物:
影响因子:1.982 (2012)

×
关键词翻译
关键词翻译
  • thermal 热的
  • temperature 温度
  • parameters 参数
  • transient 瞬变现象
  • device 装置
  • semiconductor 半导体
  • power 功率
  • static 静止的
  • impedance 阻抗
  • operating 营运