作者： 
SzuHao Chen, PoChien Chou, Stone Cheng

作者单位： 
^{1}National ChiaoTung University

刊名： 
Journal of Thermal Analysis and Calorimetry, 2017, Vol.129 (2), pp.11591168 
来源数据库： 
Springer Journal 
DOI： 
10.1007/s1097301762757 
关键词： 
Junction temperature; Power semiconductor device; Heating curve; Cooling curve; Transient thermal impedance (TTI); Safe operating area (SOA); 
英文摘要： 
A GaNbased power device is a superior component for highfrequency and highefficiency applications and especially for applications that involve megahertz power conversion. In this work, a fast process of static thermal resistance ( R _{th}) and transient thermal impedance ( Z _{th}) measurements are made and analyzed to determine the thermal characteristics of the channel temperature of a hermetically packaged GaN power device. Five temperaturesensitive parameters (TSPs) are measured at temperatures from 20 to 160 °C. Measurements and statistical analyses included variations with temperature of onresistance ( R _{on}), saturation drain current ( I _{Dsat}), drain conductance ( g _{d}), threshold voltage ( V _{th}), and knee voltage ( V... _{knee}). The statistical analyses revealed the relationships between the heating curve parameter ( R _{on}) and the cooling curve parameters ( V _{knee}, I _{Dsat}, g _{d}, and V _{th}). The average thermal resistance values are extracted as follows: Maximum R _{th} is 2.99 °C W^{−1}, minimum R _{th} is 2.92 °C W^{−1}, and the variation among the five TSPs is <3%. Conventional opticalbased techniques such as infrared (IR) and microRaman thermography are destructive to packaged devices. Therefore, this study developed the two reliable and fast nondestructive methods for estimating channel temperature with the following features: (1) They elucidate static and transient characteristics; (2) they involve heating and cooling; and (3) they evaluate transient thermal impedance (TTI) and safe operating area (SOA). The heating curve method has advantages over cooling curve method in terms of capturing time (40 vs. 400 s, respectively), and a lower power excitation is required to obtain the transient channel temperature response.

原始语种摘要： 
A GaNbased power device is a superior component for highfrequency and highefficiency applications and especially for applications that involve megahertz power conversion. In this work, a fast process of static thermal resistance ( R _{th}) and transient thermal impedance ( Z _{th}) measurements are made and analyzed to determine the thermal characteristics of the channel temperature of a hermetically packaged GaN power device. Five temperaturesensitive parameters (TSPs) are measured at temperatures from 20 to 160 °C. Measurements and statistical analyses included variations with temperature of onresistance ( R _{on}), saturation drain current ( I _{Dsat}), drain conductance ( g _{d}), threshold voltage ( V _{th}), and knee voltage ( V... _{knee}). The statistical analyses revealed the relationships between the heating curve parameter ( R _{on}) and the cooling curve parameters ( V _{knee}, I _{Dsat}, g _{d}, and V _{th}). The average thermal resistance values are extracted as follows: Maximum R _{th} is 2.99 °C W^{−1}, minimum R _{th} is 2.92 °C W^{−1}, and the variation among the five TSPs is <3%. Conventional opticalbased techniques such as infrared (IR) and microRaman thermography are destructive to packaged devices. Therefore, this study developed the two reliable and fast nondestructive methods for estimating channel temperature with the following features: (1) They elucidate static and transient characteristics; (2) they involve heating and cooling; and (3) they evaluate transient thermal impedance (TTI) and safe operating area (SOA). The heating curve method has advantages over cooling curve method in terms of capturing time (40 vs. 400 s, respectively), and a lower power excitation is required to obtain the transient channel temperature response.
