Nanoscale Conductive Channels in Silicon Whiskers with Nickel Impurity
作者: Serhii YatsukhnenkoAnatoly DruzhininIgor OstrovskiiYuriy KhoverkoMukhajlo Chernetskiy
作者单位: 1Lviv Polytechnic National University
2International Laboratory of High Magnetic Fields and Low Temperatures
刊名: Nanoscale Research Letters, 2017, Vol.12 (1), pp.1-7
来源数据库: Springer Journal
DOI: 10.1186/s11671-017-1855-9
关键词: WhiskersMagnetoresistanceImpurityClustersPolaron
英文摘要: Abstract(#br)The magnetization and magnetoresistance of Si whiskers doped with to boron concentrations corresponding to the metal-insulator transition (2 × 10 18 cm −3 ÷ 5 × 10 18 cm −3 ) were measured at high magnetic fields up to 14 T in a wide temperature range 4.2–300 K. Hysteresis of the magnetic moment was observed for Si p-type whiskers with nickel impurity in a wide temperature range 4.2–300 K indicating a strong interaction between the Ni impurities and the possibility of a magnetic cluster creation. The introduction of Ni impurity in Si whiskers leads to appearance and increase of the magnitude of negative magnetoresistance up to 10% as well as to the decrease of the whisker resistivity in the range of hopping conductance at low temperatures. The abovementioned effects...
全文获取路径: Springer  (合作)
分享到:
来源刊物:
影响因子:2.524 (2012)

×