Fabrication of 4H-SiC PiN diodes on substrate grown by HTCVD method
作者: Yuichiro TokudaHideyuki UehigashiKoichi MurataHidekazu Tsuchida
刊名: Japanese Journal of Applied Physics, 2020, Vol.59 (SG)
来源数据库: Institute of Physics Journal
DOI: 10.7567/1347-4065/ab6419
原始语种摘要: The device performance of 4H-SiC PiN diodes fabricated on a substrate produced by the HTCVD method was studied. A high-quality HTCVD substrate with a diameter of 3 in. was prepared as a specimen and fundamental PiN diodes were fabricated on the substrate. We confirmed that the diodes showed adequate operation for current–voltage characteristics in the initial state. While forward voltage is known to increase during forward operation for general PiN diodes, no increase in forward voltage was confirmed for the diodes fabricated on the HTCVD substrate even after forward current stress tests under current densities of 2500 A cm−2. It was also found that the formation of stacking faults (SFs in the drift layer was suppressed by utilizing the HTCVD substrate, which is contributed to the absence...
全文获取路径: IOP 
分享到:

×
关键词翻译
关键词翻译
  • substrate 基质
  • grown 生长
  • fabricated 制造
  • forward 促进
  • current 
  • method 方法
  • device 装置
  • drift 水平巷道
  • formation 建造
  • voltage 电压