Crystallization, Diffusion and Phase Separation in Sapphire Amorphised by Indium Ion Implantation
作者: D. X. CaoD. K. SoodA. P. Pogany
作者单位: 1Microelectronics Technology Centre , Royal Melbourne Institute of Technology , GPO Box 2476V , Melbourne 3001 , Australia .
刊名: MRS Proceedings, 1988, Vol.100
来源数据库: Cambridge University Press Journal
DOI: 10.1557/PROC-100-113
原始语种摘要: ABSTRACT Indium implantation into a-axis sapphire to peak concentrations of 8–45 mol % In produces amorphous surface layers.Migration of In during isothermal annealing at 600°C shows a strong ion dose dependence. For a dose of 6×1016In/cm2, two distinct types of In migration are seen - a) rapid diffusion of In within amorphous Al2O3 and b) diffusion of In into crystalline Al2O3 underlying the amorphous layer. For doses lower than 3×1016In/cm2 , no such migration of In is seen under identical anneal conditions. However, In undergoes phase separation into crystalline In2O3 particles embedded in amorphous Al2O3 at all doses.
全文获取路径: Cambridge U Press 

  • amorphous 非晶质的
  • layer 
  • crystalline 晶质的
  • dependence 从属
  • rapid 急流急滩
  • sapphire 蓝宝石
  • migration 迁移
  • diffusion 扩散
  • embedded 嵌入
  • surface