Shallow Junctions Formed by the Thermal Redistribution of Implanted Arsenic into TiSi<sub>2</sub>
作者: D. X. CaoH. B. HarrisonG. K. Reeves
作者单位: 1Microelectronics Technology Centre (MTC) , Royal Melbourne Institute of Technology , 124 LaTrobe Street , Melbourne , Australia 3000 .
2 Telecom Research Laboratories , 770 Blackburn Road , Clayton , Australia, 3163 .
刊名: MRS Proceedings, 1988, Vol.100
来源数据库: Cambridge University Press Journal
DOI: 10.1557/PROC-100-737
原始语种摘要: ABSTRACT Following the implantation of arsenic into titanium disilicide films on p type silicon, Rutherford backscattering has shown that rapid thermal vacuum processing (RTVP) causes the arsenic to diffuse toward the silicide/silicon interface, with an accumulation at the interface and with a sharp shallow diffusion into the silicon. The effect of the implant and anneal on the sheet resistance of the silicide and underlying silicon have been investigated’ and it is shown that anneal times of thirty seconds at 900 °C produce acceptable shallow junctions suitable for device type applications without significant deterioration in silicide electrical or physical properties.
全文获取路径: Cambridge U Press 

  • silicon 
  • silicide 硅化物
  • anneal 退火
  • sub 分段
  • device 装置
  • thermal 热的
  • electrical 电的
  • interface 界面
  • properties 道具
  • seconds 计秒