Furnace Anneal of A–Axis Sapphire Amorphised by Indium Ion Implantation
作者: D. K. SoodD. X. Cao
作者单位: 1Microelectronics and Materials Technology Centre , Royal Melbourne Institute of Technology , GPO Box 2476V , Melbourne 3001 , Australia
刊名: MRS Proceedings, 1988, Vol.128
来源数据库: Cambridge University Press Journal
DOI: 10.1557/PROC-128-587
原始语种摘要: ABSTRACT Indium implantation at 77°K into a–axis sapphire to peak concentrations of 6–45 mol % In produces amorphous surface layers. Isothermal annealing in Ar at temperatures between 600–900°C shows effects strongly dependent on ion dose. At lower doses <2×1016 In/cm2, the amorphous layer undergoes epitaxial regrowth as the amorphous to crystalline interface advances out towards the surface. Regrowth velocity is high in about the first half hour of the anneal. Regrowth obeys Arrhenius behaviour with an activation energy of 0.7eV for initial faster growth and 1.28eV for further anneal times. The amorphous phase transforms directly to ⊥-A12O3 without any evidence of an intermediary γ-phase. At higher doses, epitaxial regrowth is substantially...
全文获取路径: Cambridge U Press 

  • amorphous 非晶质的
  • layer 
  • epitaxial 外延
  • anneal 退火
  • faster 加快
  • regrowth 再生植被
  • crystalline 晶质的
  • rapid 急流急滩
  • intermediary 中间的
  • surface