Metal-free Growth of Si/SiO<sub>2</sub> Nanowires by Annealing SiO<sub>x</sub> (x<2) Films Deposited by PECVD
作者: Xiaoxin WangJianguo ZhangQiming Wang
作者单位: 1Institute of semiconductors , the Chinese Academy of Sciences Beijing , 100083 , China
刊名: MRS Proceedings, 2004, Vol.832
来源数据库: Cambridge University Press Journal
DOI: 10.1557/PROC-832-F7.11
原始语种摘要: ABSTRACT A new metal catalysis-free method of fabricating Si or SiO2 nanowires (NWs) compatible with Si CMOS technology was proposed by annealing SiOx (x<2) films deposited by plasma -enhanced chemical vapor deposition (PECVD). The effects of the Si content (x value) and thickness of SiOx films, the annealing process and flowing gas ambient on the NW growth were studied in detail. The results indicated that the SiOx film of a thickness below 300 nm with × value close to 1 was most favorable for NW growth upon annealing at 1000–1150°C in the flowing gas mixture of N2 and H2. NWs of 50–100nm in diameter and tens of micrometers in length were synthesized by this method. The formation mechanism was likely to be related to a new type of...
全文获取路径: Cambridge U Press 

  • PECVD 等离子[体]增强CVD
  • sub 分段
  • Annealing 退火
  • thickness 厚度
  • fabricating 制造
  • growth 生长
  • films 薄膜
  • annealing 热处理
  • mechanism 机构
  • diameter 直径