X-Ray Topography Analysis of 4H-SiC Crystals Grown by the High-Temperature Gas Source Method
作者: Isaho KamataNorihiro HoshinoYuichiro TokudaEmi MakinoTakahiro KandaNaohiro SugiyamaHironari KunoJun KojimaHidekazu Tsuchida
作者单位: 1Central Research Institute of Electric Power Industry (CRIEPI)
2Denso Corporation
刊名: Materials Science Forum, 2018, Vol.4496 , pp.180-183
来源数据库: Trans Tech Journal
DOI: 10.4028/www.scientific.net/MSF.924.180
关键词: X-Ray TopographyTEDTSDHigh-Temperature Gas Source Method
原始语种摘要: Synchrotron X-ray topography was carried out for 4H-SiC crystals grown by high-temperature gas source method, and transmission topography analysis with g= or 0004 was carried out for the cross-sectional samples. Dislocation contrasts extended in the growth direction were observed and the propagation behavior of threading screw dislocations (TSDs), threading edge dislocations (TEDs), basal plane dislocations (BPDs) and stacking faults (SFs) in the facet and step-flow regions were discussed. The propagation of dislocations in the fast grown crystal with a growth rate of 3.1mm/h was also evaluated by cross-sectional topography.
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  • Temperature 温度
  • Source 索尔斯
  • grown 生长
  • crystal 晶体
  • threading 穿纱
  • cross 十字
  • propagation 传播
  • topography 地形学
  • growth 生长
  • sectional 部分的